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ECTS:
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4
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Lecturers in charge:
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Prof. dr. sc.
Tomislav Suligoj
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Take exam:
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Studomat
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English level:
1,0,0
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All teaching activities will be held in Croatian. However, foreign students in mixed groups will have the opportunity to attend additional office hours with the lecturer and teaching assistants in English to help master the course materials. Additionally, the lecturer will refer foreign students to the corresponding literature in English, as well as give them the possibility of taking the associated exams in English.
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Load:
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| Lecture type | Total |
| Lectures |
30 |
* Load is given in academic hour (1 academic hour = 45 minutes)
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Description:
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Progress and development of electronics and semiconductor technology. Principles and implication of scaling and Moore's law. Silicon crystal structure. Crystal growth and production of silicon wafers. Planar technology. Principles of process integration. Modern CMOS technology. Integration of fabrication steps in planar technology. Semiconductor doping methods: diffusion and ion implantation. Dopant distributions in silicon. Physical mechanisms of doping. Selectivity in semiconductor technology, lithography. Principles of isolation and passivization, thermal oxidation. Material removal in semiconductor technology, etching. Deposition of materials in semiconductor technology. Methods of on-chip interconnections of devices and circuit blocks. Metallization systems. Limitations of semiconductor technology. Advanced materials. Nano-technology.
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Literature:
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- Silicon VLSI Technology: Fundamentals, Practice, and Modeling; James D. Plummer, Michael Deal, Peter B. Griffin; Prentice Hall; 2000; ISBN: 0-13-085037-3
- Silicon Processing for the VLSI Era, Vol. 1: Process Technology; Stanley Wolf, Richard N. Tauber; Lattice Press; 2000; ISBN: 0961672161
- Mikroelektronika Integrirani elektronički sklopovi; P. Biljanović; Školska knjiga,; 2001; ISBN: 953-0-30666-0
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Prerequisit for:
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Enrollment:
Passed:
Microelectronic Devices
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3. semester
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course for
profile
Electronics
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