Zajednički odjel za elektroničke elemente / poluvodičke integrirane sklopove

 

Područje interesa Odjela za elektroničke elemente uključuje sve elemente temeljene na elektronima i ionima koji generiraju ili su u interakciji s fotoelektričnim, elektromagnetskim, elektromehaničkim, elektro-termalnim i bioelektričnim signalima.

 

Područje interesa Odjela za poluvodičke integrirane sklopove uključuje projektiranje, implementaciju i primjenu poluvodičkih integriranih sklopova.

Vodstvo odjela - Mandat do 31.12.2025.

Mirko Poljak
predsjednik

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     Lovro Marković      dopredsjednik 

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Predavanje: " Development of...

Hrvatska sekcija IEEE, Odjel za elektroničke elemente / poluvodičke integrirane sklopove pozivaju vas na predavanje u okviru FER-ovog seminara o visokim tehnologijama

 

Development of Gated Pinned Avalanche Photodiode Pixels in CMOS Imaging Technology,

 

koje će održati Tomislav Rešetar, Mr.Sc., KU Leuven, Belgija.

Predavanje će se održati u utorak, 29. ožujka 2016. u 12:15 sati u dvorani TCR. Sadržaj predavanja i životopis predavača pročitajte u nastavku obavijesti.

Abstract:

In recent years, the image sensing industry has largely shifted from CCD to CMOS image sensing. Despite the advances in low-light imaging with standard CMOS image sensors that enable almost photon-counting capability, high-speed and global-shutter imaging is frequently limited by the noise levels of the readout circuitry. Moreover, optical properties of such sensors are also often sacrificed due to additional pixel complexity or image-lag concerns. Avalanche photodiodes are known for decades for their capability of increasing the signal to noise ratio in high-speed optical detection. Nevertheless, if employed in image sensing, they also suffer from poor optical properties and operation complexity. In this lecture, a novel pixel concept utilizing a gated backside-illuminated pinned avalanche photodiode (PAPD) is presented. The presented pixel concept is aiming to increase the pixel signal-to-noise ratio by employing avalanche gain, at the same time offering excellent optical properties due to backside-illumination and full-depletion of the sensor area. High speed electron collection is also inherent to the proposed pixel concept due to the presence of high electric fields required for impact-ionization. This seminar provides an overview of the complete pixel design cycle including conceptual exploration, finite-element simulations, test chip design and preliminary experimental device characterization.

 

Bio:

Tomislav Resetar received the B.Sc. degree in electrical engineering and information technology from the University of Zagreb, Croatia in 2010 and the M.Sc. degree in photonics from KTH Royal Institute of Technology, Stockholm, Sweden in 2012. He is currently pursuing the Ph.D. degree at KU Leuven in collaboration with IMEC, Leuven, Belgium.

Autor: Marko Koričić
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