Obavijest o predavanju

Zajednički odjel za elektroničke elemente i poluvodičke integrirane sklopove Hrvatske sekcije IEEE,

Zavod za elektroniku, mikroelektroniku, računalne i inteligentne sustave

Fakulteta elektrotehnike i računarstva Sveučilišta u Zagrebu

pozivaju Vas na predavanje

"GROUP-IV HETEROEPITAXIAL FILMS FOR MICRO AND OPTO ELECTRONIC DEVICES"

koje će održati profesor Joerg Schulze sa Instituta za poluvodiče Svečilišta u Stuttgartu

u četvrtak, 3. prosinca 2009. u 13 sati u seminaru D306 na

ZEMRIS-u

Sadržaj predavanja i životopis predavača pročitajte u nastavku obavijesti

ABSTRACT
The molecular beam epitaxy (MBE) is a powerful technology for the
manufacturing of group-IV hetero-epitaxial films with doping concentrations
ranging from 10E14cm-3 to solubility and thicknesses down to a few
monolayers. Combined with a CMOS-compatible (CMOS: Complementary
Metal-Oxide-Semiconductor) device technology novel device concepts for
high-speed electronics and optoelectronics based on crystalline
group-IV-alloys as high speed Ge infrared detectors, Esaki-tunneling diodes,
CMOS-compatible Esaki-Tunneling Field-Effect Transistors or
Impact-Ionization MOSFETs can be manufactured, tested and studied.
In the talk two of these concepts, high speed Ge infrared detectors fully
integrable in Si mainstream and Esaki-tunneling diodes, will be discussed.
This includes the discussion of the manufacturing of ultra-thin virtual
substrates for the necessary lattice accommodation between the active device
layers and the standard Si substrates, the formation of contact layers with
very high doping concentrations and the discussion of special doping
strategies for the manufacturing of abrupt doping concentration transitions
in the heteroepitaxial films.

Joerg Schulze was born in Leipzig, Germany in 1972. He received the Diploma
degree from the Faculty of Mathematics and Physics, Technical University of
Braunschweig, in 1996. He received the doctoral degree Dr.-Ing. (Ph.D.) and
the Habilitation from the Faculty of Electrical Engineering and Information
Technology (EE & IT), University of the German Federal Armed Forces Munich
(UGFAFM), in 2000 and 2004, resp.
In 2005-2008 he worked for Corporate Technology of Siemens AG in Munich as
Technical Risk Manager and as Head of the competence field "Mathematical
Engineering". In parallel he was private lecturer and faculty member of EE &
IT Faculty of UGFAFM. Since October 2008 Dr. Schulze is heading the
Institute of Semiconductor Engineering, University of Stuttgart.
His research interests include the development of the novel high-performance
group-IV-based devices. His current research is focused on Photonics,
Spintronics and Quantum Electronics.
He has published more than 80 papers in technical journals and conferences
in the area of electron devices.
He has been a reviewer for numerous technical journals and conferences
including IEEE Transactions on Elec. Devices, IEEE Elec. Device Letters,
Solid State Electronics etc.