Poziv na online IEEE predavanje: Key...

Zajednički odjel za elektroničke elemente / poluvodičke integrirane sklopove (ED15/SSC37) Hrvatske sekcije IEEE poziva Vas na online predavanje:                                             

Key bipolar transistor parameters for radiofrequency power amplifier design,

koje će održati Željko Osrečki, mag. ing., sa Sveučilišta u Zagrebu Fakulteta elektrotehnike i računarstva. Predavanje će se održati online u četvrtak 26. studenoga 2020. s početkom u 11:00 sati putem MS Teams platforme. Poveznica za pristup predavanju je ovdje.

Predavanje je na hrvatskom jeziku, a predviđeno trajanje s raspravom je 45 minuta. Predavanje je otvoreno za sve zainteresirane, a posebno pozivamo studente. Više o predavaču i predavanju možete pročitati u opširnijem sadržaju obavijesti.


Radiofrequency (RF) power amplifier (PA) is a critical building block in a RF front-end since it defines many wireless communication system parameters, such as a lifetime of the battery in a handheld device or running costs of a base station, but the linearity of the wireless communication system as well. The ideal PA amplifies the information-carrying signal with no distortion while exhibiting high output power and efficiency. Since such a PA design is always aimed for but seldom achievable, the transistor used for the PA design should be extensively and accurately characterized both in small- and large-signal operation in order to construct a reliable model for the optimization of the circuit and, consequently, to satisfy the specifications set by the modern wireless communication standards. Although small-signal S-parameter measurements are usually the first step in the characterization process, the large-signal nature of the output and input signals at the transistor’s terminals makes the small-signal analysis insufficient for the successful PA design. Therefore, a large-signal transistor characterization, which relies on a calibrated and automated load-pull setup with the time-domain voltage and current waveform measurement capability at the transistor’s terminals, provides the most reliable information for both the device and circuit design.

In this talk, an overview of the theory and development of the load-pull measurement setup for large-signal characterization is presented. The measurement data is shown for the packaged Horizontal Current Bipolar Transistor (HCBT), an advanced bipolar transistor invented at the Laboratory for micro and nano electronics (MiNEL), Faculty of electrical engineering and computing (FER). The most important bipolar transistor parameters for the PA design are identified and measured using the developed setup. Additionally, a design of advanced HCBT PA architectures exhibiting state-of-the-art performance is presented.



Željko Osrečki graduated from Faculty of Electrical Engineering, Computer Science and Information Technology Osijek in 2014 and from Faculty of Electrical Engineering and Computing in Zagreb in 2016. Over a period from July 2016 to October 2016 he was working on a project “Demonstration of low noise amplifier in horizontal current bipolar transistor technology” as a project engineer. As of October 2016, he is with the Department of Electronics, Microelectronics, Computer and Intelligent Systems as a Research and Teaching Assistant on the project “High-performance Semiconductor Devices for Wireless Circuit and Optical Detection Applications” led by Professor Tomislav Suligoj. His research focus is design and optimization of radiofrequency power amplifiers in advanced horizontal current bipolar technology - HCBT. He is winner of Dean’s Award for team scientific work titled “Design of quenching circuits for single-photon avalanche diodes”.

Autor: Mirko Poljak
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