"Gallium nitride epilayers on synthetic diamond wafers for thermal
management in high-power electronic devices"
In the last ten years, gallium nitride has been the subject of increasing research and commercialization efforts due to its unique physical and technological attributes: It has a relatively large bandgap energy, high critical field and electron saturation velocity in respect to other semiconductors, and an ability to form compound heterojunctions with aluminum and indium nitride. The primary applications are high-frequency high-power transistors, power electronics, and solid-state illumination.
This talk will describe the current efforts in gallium-nitride transistor thermal management by mounting gallium-nitride epi-layers on top of synthetic diamond wafers at Group4 Labs from Menlo Park, California. The essential advantage of the approach presented here is that gallium nitride epilayers are atomically attached to synthetic diamond realizing near-optimal heat transfer from the heat source (channel of a high-electron mobility transistors) and the heat spreader (diamond layers). The technologypresented here is also applicable to other materials.
Dubravko Babic received his Dipl.Ing. Degree in Electrical Engineering from the University of Zagreb, Croatia, and his Ph. D. degree in Electrical & Computer Engineering from the University of California Santa Barbara. Dr. Babic has over 100 publications / conference presentations and eighteen patents.
Dubravko Babic is a technology expert with over twenty years experience in high-speed fiber-optic and electronic component design and manufacturing, and with business experience in technology licensing and running private high-technology companies. He founded Alvésta Corporation, a manufacturer of 10Gb/s parallel-optic transceivers, in 1999, and co-founded Group 4 Labs in 2002. Prior to Alvesta, he was a Member of Technical Staff at Hewlett-Packard Laboratories in Palo Alto leading long-wavelength vertical-cavity surface-emitting laser (VCSEL) development. In 1995, he fabricated the world’s first room-temperature continuous-wave operating long-wavelength VCSEL.