Područje interesa Odjela za elektroničke elemente uključuje sve elemente temeljene na elektronima i ionima koji generiraju ili su u interakciji s fotoelektričnim, elektromagnetskim, elektromehaničkim, elektro-termalnim i bioelektričnim signalima.
Područje interesa Odjela za poluvodičke integrirane sklopove uključuje projektiranje, implementaciju i primjenu poluvodičkih integriranih sklopova.
Zajednički odjel za elektroničke elemente / poluvodičke integrirane sklopove (ED15/SSC37) Hrvatske sekcije IEEE poziva Vas na predavanje
Modeling gain and noise in hetero-junction avalanche-photo-diodes
koje će održati Prof. Pierpaolo Palestri, University of Udine, Italija. Predavanje će se održati u srijedu 9. svibnja 2018. s početkom u 10:00 sati u Sivoj vijećnici Fakulteta elektrotehnike i računarstva Sveučilišta u Zagrebu, Unska 3, Zagreb.
Više o predavaču i predavanju možete pročitati u opširnijem sadržaju obavijesti.
ABSTRACT
Avalanche photo diodes (APDs) find widespread use in optical communications as well as detectors for X-rays. An internal gain is provided by impact ionization that however induce additional noise and, for high gains, a penalty in the device speed. After an introduction about the figures of merit for such devices, the talk will review the main models used for gain, noise and speed in APDs, with focus on X-rays detections. Implementations of a non-local history-dependent model will be presented, based on finite differences as well as on Monte Carlo techniques. Calibration of a newly developed non-local history-dependent model based on a simple energy balance equation will be shown using available gain and noise data for pin diodes in different materials. Different definitions of effective electric field will be compared with the aim of describing impact ionization in hetero-junction structures composed by III-V materials, the so-called “staircase” diodes that allows for low noise and high-gain. Results for AlGaAs/GaAs super-lattices will be shown and compared with available experiments.
BIO
Pierpaolo Palestri received the Laurea Degree in Electronic Engineering from the University of Bologna, Italy, in 1998, and the Ph.D. in Electronic Engineering from the University of Udine, Italy, in 2003. From July 2000 to September 2001 he held a post-doctoral position at Bell Laboratories, Lucent Technologies (then Agere Systems), Murray Hill, NJ, USA, where he worked on high-speed silicon-germanium bipolar technologies. In October 2001 he became Research Associate and in November 2005 Associate Professor at the University of Udine.
His research interests include the modeling of carrier transport, hot-carrier and tunneling phenomena in nanoscale devices and Non-Volatile-Memory cells, as well as the design of integrated circuits for high-frequency applications and model development of X-ray detectors and nano-bio-sensors.
Pierpaolo Palestri has coauthored about 250 papers in international journals and conferences with peer review. He also acts as a reviewer for IEEE Electron Device Letters, IEEE Transactions on Electron Devices, and Solid State Electronics, IEEE Transactions on Circuit and Systems II, IEEE Journal of the Electron Device Society.
