Odjel za električne krugove i sustave

Odjel za električne krugove i sustave bavi se teorijom, analizom, oblikovanjem (računalno potpomognuto oblikovanje), praktičnom primjenom krugova i primjena teoretskih metoda analize krugova na sustave i obradu signala. Ovo područje pokriva čitav niz aktivnosti od osnovne znanstvene teorije do industrijskih primjena.
Mandat do 31. 12. 2020.
Adrijan Barić
predsjednik
Vladimir Čeperić
dopredsjednik

Hrvatska sekcija IEEE, Odjel za električne krugove i sustave (CAS) i zajednički odjel za elektroničke elemente/poluvodičke integrirane sklopove (ED/SSC)  pozivaju vas na predavanje

"Electro-thermal characterization of Gallium Nitride (GaN) power devices: experimental and modelling techniques"

koje će održati dr. sc. Vice Šodan u dvorani TCR u četvrtak, 26. listopada 2017. u 13:15 sati.

Abstract:

Semiconductor power devices play a key role in power electronics for the conversion, process and control of electric energy where silicon power components have traditionally been utilized in power systems. A new group of semiconductors, called wide-bandgap (WBG) semiconductors, have attracted great attention in recent years due to the capability that permits devices to operate at higher voltages, frequencies and temperatures compared with existing devices. The most promising WBG material with the potential to allow production of smaller, faster and more efficient power components is gallium nitride (GaN).

This talk focuses on the electro-thermal behavior of GaN power devices in real applications since it is expected that a breakthrough of the GaN technology in the power electronics market will soon be achieved. In comparison with conventional (silicon) power components, GaN power devices exhibit higher power densities over smaller sizes which lead to elevated temperatures inside the devices due to Joule heating. This fact indisputably imposes proper thermal management to play an important role in achieving the best performance of GaN power devices. Therefore, the electro-thermal behavior of GaN devices with an emphasis on thermal behavior is fundamentally investigated in this talk. Different experimental characterization techniques will be presented to get a detailed insight in the electro‑thermal behavior. Lastly, a novel modelling concept based on a distributed approach for accurate electro-thermal simulations will be presented.

CV:

Vice Šodan was born in Split, Croatia. He received the B.Sc. and the M.Sc. degree in Electronic Engineering from the University of Zagreb, Croatia in 2010 and 2012, respectively. He joined imec, Belgium in 2013, pursuing the PhD degree with the KU Leuven and working on development of gallium nitride technology for high-power applications. He obtained PhD degree in 2017.  Since 2017 he is working as silicon carbide technology development engineer at Infineon Technologies, Austria.

Autor: Adrijan Barić
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